Combinatorial synthesis and high-throughput photopotential and photocurrent screening of mixed-metal oxides for photoelectrochemical water splitting

A high-throughput method has been developed using a commercial piezoelectric inkjet printer for synthesis and characterization of mixed-metal oxide photoelectrode materials for water splitting. The printer was used to deposit metal nitrate solutions onto a conductive glass substrate. The deposited metal nitrate solutions were then pyrolyzed to yield mixed-metal oxides that contained up to eight distinct metals. The stoichiometry of the metal oxides was controlled quantitatively, allowing for the creation of vast libraries of novel materials. Automated methods were developed to measure the open-circuit potentials (Eoc), short-circuit photocurrent densities (Jsc), and current density vs. applied potential (J–E) behavior under visible light irradiation. The high-throughput measurement of Eoc is particularly significant because open-circuit potential measurements allow the interfacial energetics to be probed regardless of whether the band edges of the materials of concern are above, close to, or below the values needed to sustain water electrolysis under standard conditions. The Eoc measurements allow high-throughput compilation of a suite of data that can be associated with the composition of the various materials in the library, to thereby aid in the development of additional screens and to form a basis for development of theoretical guidance in the prediction of additional potentially promising photoelectrode compositions

Solar Water Splitting Cells

No abstract

Photoelectrochemical Hydrogen Evolution Using Si Microwire Arrays

Arrays of B-doped p-Si microwires, diffusion-doped with P to form a radial n+ emitter and subsequently coated with a 1.5-nm-thick discontinuous film of evaporated Pt, were used as photocathodes for H_2 evolution from water. These electrodes yielded thermodynamically based energy-conversion efficiencies >5% under 1 sun solar simulation, despite absorbing less than 50% of the above-band-gap incident photons. Analogous p-Si wire-array electrodes yielded efficiencies <0.2%, largely limited by the low photovoltage generated at the p-Si/H_2O junction

Enhanced Stability and Efficiency for Photoelectrochemical Iodide Oxidation by Methyl Termination and Electrochemical Pt Deposition of n-Si Microwire Arrays

Arrays of Si microwires doped n-type (n-Si) and surface-functionalized with methyl groups have been used, with or without deposition of Pt electrocatalysts, to photoelectrochemically oxidize I–(aq) to I_3–(aq) in 7.6 M HI(aq). Under conditions of iodide oxidation, methyl-terminated n-Si microwire arrays exhibited stable short-circuit photocurrents over a time scale of days, albeit with low energy-conversion efficiencies. In contrast, electrochemical deposition of Pt onto methyl-terminated n-Si microwire arrays consistently yielded energy-conversion efficiencies of ∼2% for iodide oxidation, with an open-circuit photovoltage of ∼400 mV and a short-circuit photocurrent density of ∼10 mA cm^(–2) under 100 mW cm^(–2) of simulated air mass 1.5G solar illumination. Platinized electrodes were stable for >200 h of continuous operation, with no discernible loss of Si or Pt. Pt deposited using electron-beam evaporation also resulted in stable photoanodic operation of the methyl-terminated n-Si microwire arrays but yielded substantially lower photovoltages than when Pt was deposited electrochemically

Enhanced Stability and Efficiency for Photoelectrochemical Iodide Oxidation by Methyl Termination and Electrochemical Pt Deposition of n-Si Microwire Arrays

Arrays of Si microwires doped n-type (n-Si) and surface-functionalized with methyl groups have been used, with or without deposition of Pt electrocatalysts, to photoelectrochemically oxidize I–(aq) to I_3–(aq) in 7.6 M HI(aq). Under conditions of iodide oxidation, methyl-terminated n-Si microwire arrays exhibited stable short-circuit photocurrents over a time scale of days, albeit with low energy-conversion efficiencies. In contrast, electrochemical deposition of Pt onto methyl-terminated n-Si microwire arrays consistently yielded energy-conversion efficiencies of ∼2% for iodide oxidation, with an open-circuit photovoltage of ∼400 mV and a short-circuit photocurrent density of ∼10 mA cm^(–2) under 100 mW cm^(–2) of simulated air mass 1.5G solar illumination. Platinized electrodes were stable for >200 h of continuous operation, with no discernible loss of Si or Pt. Pt deposited using electron-beam evaporation also resulted in stable photoanodic operation of the methyl-terminated n-Si microwire arrays but yielded substantially lower photovoltages than when Pt was deposited electrochemically

Photoanodic behavior of vapor-liquid-solid–grown, lightly doped, crystalline Si microwire arrays

Arrays of n-Si microwires have to date exhibited low efficiencies when measured as photoanodes in contact with a 1-1′-dimethylferrocene (Me_2Fc^(+/0))–CH_3OH solution. Using high-purity Au or Cu catalysts, arrays of crystalline Si microwires were grown by a vapor-liquid-solid process without dopants, which produced wires with electronically active dopant concentrations of 1 × 10^(13) cm^(−3). When measured as photoanodes in contact with a Me_2Fc^(+/0)–CH_3OH solution, the lightly doped Si microwire arrays exhibited greatly increased fill factors and efficiencies as compared to n-Si microwires grown previously with a lower purity Au catalyst. In particular, the Cu-catalyzed Si microwire array photoanodes exhibited open-circuit voltages of ~0.44 V, carrier-collection efficiencies exceeding ~0.75, and an energy-conversion efficiency of 1.4% under simulated air mass 1.5 G illumination. Lightly doped Cu-catalyzed Si microwire array photoanodes have thus demonstrated performance that is comparable to that of optimally doped p-type Si microwire array photocathodes in photoelectrochemical cells